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Proceedings Paper

Characterization of bulk ZnO single crystal grown by a CVT method
Author(s): Xuecheng Wei; Youwen Zhao; Zhiyuan Dong; Jinmin Li
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Paper Abstract

Hall effect, photoluminescence spectroscopy (PL), mass spectroscopy and X-ray diffraction have been used to study bulk ZnO single crystal grown by a closed seeded chemical vapor transport method. Enhancement of n-type electrical conduction and increase of nitrogen concentration are observed of the ZnO samples after high temperature annealing. The results suggest that vacancy is dominant native defect in the ZnO material. These phenomena are explained by a generation of shallow donor defect and suppression of deep level defects in ZnO after the annealing.

Paper Details

Date Published: 4 January 2008
PDF: 7 pages
Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410F (4 January 2008); doi: 10.1117/12.759322
Show Author Affiliations
Xuecheng Wei, Institute of Semiconductors (China)
Youwen Zhao, Institute of Semiconductors (China)
Zhiyuan Dong, Institute of Semiconductors (China)
Jinmin Li, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 6841:
Solid State Lighting and Solar Energy Technologies
Jinmin Li; Yuwen Zhao; Nuofu Chen; Ling Wu; Yubo Fan; Vladimir M. Andreev; Yong-Hang Zhang; Jai Singh; Michael E. Coltrin, Editor(s)

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