The lateral PIN photodiode (LPP) can be fabricated with ease using standard CMOS techniques such as diffusion or ion implantation to form the p+ and n+ wells in the absorbing layer. A novel diffusion-based three-dimensional LPP was modeled utilizing In_0.53Ga_0.47As as the absorbing layer. Interdigitated electrode structures were used to obtain responsivity of ~0.5-0.6 A/W and -3dB frequency of ~14-15 GHz at a wavelength of 1550 nm, bias voltage of 5V and optical power of 10 Wcm^-2. The modeled device is able to cater for 10 Gbit/s optical communication networks.

Date Published: 28 December 2007
PDF: 9 pages
Proc. SPIE 6798, Microelectronics: Design, Technology, and Packaging III, 679819 (28 December 2007); doi: 10.1117/12.759055

Published in SPIE Proceedings Vol. 6798:
Microelectronics: Design, Technology, and Packaging III
Alex J. Hariz; Vijay K. Varadan, Editor(s)