
Proceedings Paper
Novel 3D modeling of In0.53Ga0.47As lateral PIN photodiodeFormat | Member Price | Non-Member Price |
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Paper Abstract
The lateral PIN photodiode (LPP) can be fabricated with ease using standard CMOS techniques such as diffusion or ion
implantation to form the p+ and n+ wells in the absorbing layer. A novel diffusion-based three-dimensional LPP was
modeled utilizing In0.53Ga0.47As as the absorbing layer. Interdigitated electrode structures were used to obtain
responsivity of ~0.5-0.6 A/W and -3dB frequency of ~14-15 GHz at a wavelength of 1550 nm, bias voltage of 5V and
optical power of 10 Wcm-2. The modeled device is able to cater for 10 Gbit/s optical communication networks.
Paper Details
Date Published: 28 December 2007
PDF: 9 pages
Proc. SPIE 6798, Microelectronics: Design, Technology, and Packaging III, 679819 (28 December 2007); doi: 10.1117/12.759055
Published in SPIE Proceedings Vol. 6798:
Microelectronics: Design, Technology, and Packaging III
Alex J. Hariz; Vijay K. Varadan, Editor(s)
PDF: 9 pages
Proc. SPIE 6798, Microelectronics: Design, Technology, and Packaging III, 679819 (28 December 2007); doi: 10.1117/12.759055
Show Author Affiliations
P. Susthitha Menon, Univ. Kebangsaan Malaysia (Malaysia)
Kumarajah Kandiah, Univ. Kebangsaan Malaysia (Malaysia)
Kumarajah Kandiah, Univ. Kebangsaan Malaysia (Malaysia)
Mohd Syuhaimi bin Abd Rahman, Univ. Kebangsaan Malaysia (Malaysia)
Sahbudin Shaari, Univ. Kebangsaan Malaysia (Malaysia)
Sahbudin Shaari, Univ. Kebangsaan Malaysia (Malaysia)
Published in SPIE Proceedings Vol. 6798:
Microelectronics: Design, Technology, and Packaging III
Alex J. Hariz; Vijay K. Varadan, Editor(s)
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