Proceedings Paper
A 4-8GHz CMOS active balun using a compensated single-FET topology| Format | Member Price | Non-Member Price |
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Paper Abstract
A single-FET active balun has been developed with a phase imbalance of less than ±1.5° and amplitude imbalance less
than ±0.6dB from 4 to 8 GHz using 0.25μm silicon-on-sapphire CMOS. The source terminal of the transistor has been
compensated with a shunt capacitance to ground and increased value for the source resistance. The compensation
network has improved the phase imbalance by 29° at 8 GHz. The circuit dissipates 15mW and is 260×300μm including
AC coupling capacitors.
Paper Details
Date Published: 21 December 2007
PDF: 5 pages
Proc. SPIE 6798, Microelectronics: Design, Technology, and Packaging III, 679817 (21 December 2007); doi: 10.1117/12.758878
Published in SPIE Proceedings Vol. 6798:
Microelectronics: Design, Technology, and Packaging III
Alex J. Hariz; Vijay K. Varadan, Editor(s)
PDF: 5 pages
Proc. SPIE 6798, Microelectronics: Design, Technology, and Packaging III, 679817 (21 December 2007); doi: 10.1117/12.758878
Show Author Affiliations
Leigh Milner, Defence Science Technology Organisation (Australia)
Published in SPIE Proceedings Vol. 6798:
Microelectronics: Design, Technology, and Packaging III
Alex J. Hariz; Vijay K. Varadan, Editor(s)
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