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Proceedings Paper

Enhanced efficiency of near-UV emitting LEDs for solid state lighting applications
Author(s): D. Zhu; B. Corbett; B. Roycroft; P. Maaskant; C. McAleese; M. Akhter; M. J. Kappers; C. J. Humphreys
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Paper Abstract

The performance of a series of near-UV (~385 nm) emitting LEDs, consisting of high efficiency InGaN/AlInGaN QWs in the active region, was investigated. Significantly reduced roll-over of efficiency at high current density was found compared to InGaN/GaN LEDs emitting at a similar wavelength. The importance of optical cavity effects in flip-chip geometry devices has also been investigated. The light output was enhanced by more than a factor of 2 when the light-emitting region was located at an anti-node position with respect to a high reflectivity current injection mirror. A power of 0.49 mW into a numerical aperture of 0.5 was obtained for a junction area of 50 micrometers in diameter and a current of 30 mA, corresponding to a radiance of 30 W/cm2/str.

Paper Details

Date Published: 26 September 2007
PDF: 7 pages
Proc. SPIE 6797, Manufacturing LEDs for Lighting and Displays, 67970O (26 September 2007); doi: 10.1117/12.758799
Show Author Affiliations
D. Zhu, Univ. of Cambridge (United Kingdom)
B. Corbett, Tyndall National Institute (Ireland)
B. Roycroft, Tyndall National Institute (Ireland)
P. Maaskant, Tyndall National Institute (Ireland)
C. McAleese, Univ. of Cambridge (United Kingdom)
M. Akhter, Tyndall National Institute (Ireland)
M. J. Kappers, Univ. of Cambridge (United Kingdom)
C. J. Humphreys, Univ. of Cambridge (United Kingdom)

Published in SPIE Proceedings Vol. 6797:
Manufacturing LEDs for Lighting and Displays
Thomas P. Pearsall, Editor(s)

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