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Proceedings Paper

Selection of parameters in laser-amplifier injection locking
Author(s): Jianmei Liu; Yunfei Xu; Zhang Zhang; Shunli Han; Xiaolong Wang; Qiang Lin
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Paper Abstract

Narrow-linewidth tunable diode lasers have been widely used in the field of research, but the output power of such lasers is generally low. This paper deals with a low-cost and easily constructed diode laser amplifier. With the technique of laser injection, the output of an external cavity diode laser (ECDL), which is locked onto the D2 line of 87Rb, is injected into a common commercial 784nm laser diode and the injection locking is achieved. This yields a 120mW single mode laser of which the line width is less than 1MHz, which is to be used in laser trapping of 87Rb atom. Furthermore, the influences of the parameters, including the seed light power, the injection current and the temperature, on the operating characteristics of the injection locked laser diode is investigated. The threshold over which the locking would be interrupted due to the variation of the current and the temperature is also derived, which leads to the optimized operating parameters of injection locking.

Paper Details

Date Published: 7 January 2008
PDF: 7 pages
Proc. SPIE 6824, Semiconductor Lasers and Applications III, 68240Q (7 January 2008); doi: 10.1117/12.757771
Show Author Affiliations
Jianmei Liu, Zhejiang Univ. (China)
Yunfei Xu, Zhejiang Univ. (China)
Zhang Zhang, Zhejiang Univ. (China)
Shunli Han, Zhejiang Univ. (China)
Xiaolong Wang, Zhejiang Univ. (China)
Qiang Lin, Zhejiang Univ. (China)

Published in SPIE Proceedings Vol. 6824:
Semiconductor Lasers and Applications III
Lianghui Chen; Hiroyuki Suzuki; Paul T. Rudy; Ninghua Zhu, Editor(s)

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