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Proceedings Paper

The μc-Si on plastic substrate crystallized by pulsed double-frequency YAG laser annealing
Author(s): Juan Li; Zhiguo Meng; Yang Li; Chunya Wu; Hoi Sing Kwok; Shaozhen Xiong
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Paper Abstract

Microcrystalline silicon (μc-Si) thin film transistors (TFTs) can be provided with higher mobility and stability than a-Si and better uniformity than poly-Si TFTs, it would be more suitable to be applied in larger area AMOLED. By using 2ωYAG laser annealing, crystalline μc-Si thin film on plastic substrate has been investigated and the proper laser energy needed for crystallization has been indicated. It has been found that the dehydrogenation process at 300~450 °C for a few of hours could be omitted by decreasing the H content in the crystallization precursor, which is suitable for laser crystallization on plastic substrate. The crystalline volume fraction (Xc) and the grain size of the resulted μc-Si could be adjusted by controlling the laser energy. By this method, the μc-Si on plastic substrate with the Xc and the grain size are 85% (at the maximum) and 50nm respectively has been achieved.

Paper Details

Date Published: 1 February 2008
PDF: 8 pages
Proc. SPIE 6825, Lasers in Material Processing and Manufacturing III, 682519 (1 February 2008); doi: 10.1117/12.757497
Show Author Affiliations
Juan Li, Nankai Univ. (China)
Tianjin Univ. (China)
Zhiguo Meng, Nankai Univ. (China)
Tianjin Univ. (China)
Yang Li, Nankai Univ. (China)
Tianjin Univ. (China)
Chunya Wu, Nankai Univ. (China)
Tianjin Univ. (China)
Hoi Sing Kwok, The Hong Kong Univ. of Science and Technology (Hong Kong China)
Shaozhen Xiong, Nankai Univ. (China)
Tianjin Univ. (China)

Published in SPIE Proceedings Vol. 6825:
Lasers in Material Processing and Manufacturing III
ShuShen Deng; Akira Matsunawa; Xiao Zhu, Editor(s)

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