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Proceedings Paper

Strain analysis in pseudomorphically grown GaN-based multiple epitaxial layers
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Paper Abstract

A strain analysis model in the pseudomorphically grown epitaxial multilayer system is investigated. Analytical formulas of strain parameters in each epitaxial layer are derived as the following assumptions: (1) the substrate thickness is finite, (2) the in-plane lattice constant is the same for all epitaxial layers for dislocation free growth, (3) the stress along the crystal growth direction is constant, but not necessary zero, (4) the in-plane lattice constant is determined such that the total strain energy. We find the residual stress affect the electronic properties of epitaxially grown multilayer system even though in-plane lattice constant is unchangeable compare with no stress along the crystal growth direction.

Paper Details

Date Published: 7 January 2008
PDF: 9 pages
Proc. SPIE 6824, Semiconductor Lasers and Applications III, 68240V (7 January 2008); doi: 10.1117/12.757296
Show Author Affiliations
Donghyun Jang, Hanyang Univ. (South Korea)
Jongin Shim, Hanyang Univ. (South Korea)

Published in SPIE Proceedings Vol. 6824:
Semiconductor Lasers and Applications III
Lianghui Chen; Hiroyuki Suzuki; Paul T. Rudy; Ninghua Zhu, Editor(s)

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