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Proceedings Paper

Study of photovoltaic characteristics of diffuse-processed porous silicon and ion-implanted porous silicon
Author(s): Mei Xiang; Zhenhong Jia
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Paper Abstract

Diffuse processes on the p-type single crystal silicon produced the p-n junction. Porous silicon was prepared by using oxidation etching on the surface of the single crystal with p-n junction. A quantum-sized thin film of TiO2 was deposited by reactive magnetron sputtering on the p-n junction. The results obtained by the surface photovoltage spectroscope (SPS) showed that the photovoltage of TiO2/n-Si/p-Si and n-PS/p-PS/Si increase than the photovoltage of n-Si/p-Si. In 300~600 °C, the photovoltage of TiO2/n-Si/p-Si was enhancing with the rise of temperature, but the photovoltage of TiO2/n-Si/p-Si was reducing with the rise of temperature in 600~800 °C. The effects of different ion-implantation in single crystal silicon and porous silicon on the photovoltaic characteristics are studied, the photovoltage of argon implanted samples and nitrogen implanted samples was increased a lot beyond the photovoltage of non-implanted samples.

Paper Details

Date Published: 4 January 2008
PDF: 6 pages
Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68411W (4 January 2008); doi: 10.1117/12.756673
Show Author Affiliations
Mei Xiang, Xinjiang Univ. (China)
Zhenhong Jia, Xinjiang Univ. (China)

Published in SPIE Proceedings Vol. 6841:
Solid State Lighting and Solar Energy Technologies
Jinmin Li; Yuwen Zhao; Nuofu Chen; Ling Wu; Yubo Fan; Vladimir M. Andreev; Yong-Hang Zhang; Jai Singh; Michael E. Coltrin, Editor(s)

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