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Proceedings Paper

Current spreading analysis in vertical electrode GaN-based blue LEDs
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Paper Abstract

In this study, effects of n-electrode patterns to the current spreading in the active region were analyzed on the blue vertical light emitting diode (VLED) with GaN/InGaN multi quantum well (MQW). Several n-electrode patterns of the VLED are designed, analyzed qualitatively, and investigated its effect to current spreading in the active region. A 3-dimensinal circuit model whose parameters are experimentally extracted from an actual VLED chip is adopted for the quantitative analysis of current spreading. The n-electrode patterns are modeled and simulated by simple electrical circuits in order to find the current distribution and current-voltage characteristics of devices. Based on theoretical analysis results, blue VLEDs with different n-electrode patterns were fabricated and a series of measurements were carried out. Analytic and experimental results for different n-electrode pattern showed quite similar tendencies. Finally, we proposed some design methodologies for improved current spreading.

Paper Details

Date Published: 15 January 2008
PDF: 8 pages
Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410L (15 January 2008); doi: 10.1117/12.756517
Show Author Affiliations
Joo Sun Yun, Hanyang Univ. (South Korea)
Sung Min Hwang, Hanyang Univ. (South Korea)
Jong In Shim, Hanyang Univ. (South Korea)

Published in SPIE Proceedings Vol. 6841:
Solid State Lighting and Solar Energy Technologies
Jinmin Li; Yuwen Zhao; Nuofu Chen; Ling Wu; Yubo Fan; Vladimir M. Andreev; Yong-Hang Zhang; Jai Singh; Michael E. Coltrin, Editor(s)

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