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Proceedings Paper

Investigation of semi-insulating GaAs photoconductive switches triggered by semiconductor lasers
Author(s): Wei Shi; Xue Liao; Zheng Liu; Deming Ma
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Paper Abstract

The experiment result of semi-insulating GaAs photoconductive semiconductor switch (PCSS) with different electrode gaps triggered by semiconductor laser is reported. With the biased voltage of 500V, the semi-insulating GaAs PCSS with 2mm electrode gap is triggered by laser pulse with 5ns pulse width and repetition rate of 15 kHz, then two groups of electrical pulse samples indicate that laser pulse is instable when laser energy is very low. With the biased voltage of 210V, the GaAs PCSS with 0.5mm electrode gap is triggered by the laser pulse in several dozens nanoseconds at 905nm with a repetition rate of 2 kHz. A stable linear electrical pulse is observed. When the energy of the laser increases, the amplitude and the width of the electrical pulse also increase. It indicates that a stable electrical pulse is obtained while laser energy is high. With the biased voltage of 2400V, the GaAs PCSS with 1mm electrode gap is triggered by laser pulse about 100nJ in 40ns at 904nm. The GaAs PCSS switches a electrical pulse with a voltage up to 1700V. Carriers accumulation effect is discussed and the critical value of carriers accumulation effect is given. The relation of the biased voltage, electrode gap and carriers accumulation effect is also discussed. The concentration of deep EL2 traps in GaAs has a certain effect on nonlinear mode of GaAs PCSS.

Paper Details

Date Published: 7 January 2008
PDF: 8 pages
Proc. SPIE 6824, Semiconductor Lasers and Applications III, 682419 (7 January 2008); doi: 10.1117/12.756419
Show Author Affiliations
Wei Shi, Xi'an Univ. of Technology (China)
Xue Liao, Xi'an Univ. of Technology (China)
Zheng Liu, Xi'an Univ. of Technology (China)
Deming Ma, Xi'an Univ. of Technology (China)

Published in SPIE Proceedings Vol. 6824:
Semiconductor Lasers and Applications III
Lianghui Chen; Hiroyuki Suzuki; Paul T. Rudy; Ninghua Zhu, Editor(s)

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