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Proceedings Paper

Effects of pretreatment for sapphire on GaN optical propertities
Author(s): Dongsheng Peng; Yuchun Feng; Ruisheng Zheng; Hanben Niu
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Paper Abstract

High quality GaN films with low dislocation density have been grown on sapphire substrate which is pretreated by a new and simple method in order to overcome those problems existing in the conventional ELO technique. Etch pits on sapphire substrate surface are formed after surface treating. GaN films have been grown by LP-MOCVD on the sapphire substrate, which a half of it is treated by chemical etch. Both the thickness and dispersion of the refractive index of GaN films are obtained by spectroscopic ellipsometry. With the dispersion of the refractive index, the transmission spectrum of GaN is studied and the thickness of GaN epilayer is calculated. The two values of the thickness obtained by these two different methods are in good agreement. The epilayer grown on the surface treated sapphire substrate exhibits superior optical properties and crystal properties, in which the yellow luminescence is nearly invisible in the photoluminescence spectrum, the higher transmission ratio and the greater modulation depth can be shown in the transmission spectrum.

Paper Details

Date Published: 20 November 2007
PDF: 9 pages
Proc. SPIE 6828, Light-Emitting Diode Materials and Devices II, 68280W (20 November 2007); doi: 10.1117/12.756253
Show Author Affiliations
Dongsheng Peng, Shenzhen Univ. (China)
Yuchun Feng, Shenzhen Univ. (China)
Ruisheng Zheng, Shenzhen Univ. (China)
Hanben Niu, Shenzhen Univ. (China)

Published in SPIE Proceedings Vol. 6828:
Light-Emitting Diode Materials and Devices II
Jian Wang; Changhee Lee; Hezhou Wang, Editor(s)

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