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Proceedings Paper

Fabrication of wall array by electrochemical etching of n-type silicon
Author(s): Zhigang Zhao; Caili Bai D.V.M.; Jinchuan Guo; Hanben Niu
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Paper Abstract

Electrochemical etching of patterned n-type silicon in hydrofluoric acid (HF) solution has been employed as a useful micromachining technique. In this paper, 4 um pitch regular wall array structures with high aspect ratio (larger than 20) were fabricated in n-typed silicon with back side illuminating. Differing from common hole array's fabrication, undesired formation of separated pores along the trench bottom becomes a serious problem in the wall array's fabrication. By adjusting the etching current density, we have successfully suppressed this phenomenon. A theoretical analysis of the formation mechanism of wall array will also be discussed in this paper.

Paper Details

Date Published: 4 January 2008
PDF: 5 pages
Proc. SPIE 6836, MEMS/MOEMS Technologies and Applications III, 68360W (4 January 2008); doi: 10.1117/12.755878
Show Author Affiliations
Zhigang Zhao, Huazhong Univ. of Science and Technology (China)
Shenzhen Univ. (China)
Caili Bai D.V.M., Shenzhen Univ. (China)
Jinchuan Guo, Shenzhen Univ. (China)
Hanben Niu, Shenzhen Univ. (China)

Published in SPIE Proceedings Vol. 6836:
MEMS/MOEMS Technologies and Applications III
Jung-Chih Chiao; Xuyuan Chen; Zhaoying Zhou; Xinxin Li, Editor(s)

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