
Proceedings Paper
Characterization of AlGaN on GaN template grown by MOCVDFormat | Member Price | Non-Member Price |
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Paper Abstract
AlxGa1-xN layer was grown on sapphire substrate with GaN template by Metal Organic Chemical Vapor Deposition
system (MOCVD). High temperature AlN (HT-AlN) interlayer was inserted between AlxGa1-xN layer and GaN template
to solve the cracking problem that often appears on AlxGa1-xN surface when directly grown on high temperature GaN
template. Optical microscope, scanning electron microscopy (SEM), atomic force microscope (AFM), high resolution x-ray
diffraction (HRXRD) and cathodoluminescence (CL) were used for characterization. It was found that the cracking
was successfully eliminated. Furthermore, the crystalline quality of AlxGa1-xN layer with HT-AlN interlayer was much
improved. Interference fringes were found in the HRXRD images. CL test showed that yellow emission was much
reduced for AlGaN layer with HT-AlN interlayer.
Paper Details
Date Published: 4 January 2008
PDF: 6 pages
Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410K (4 January 2008); doi: 10.1117/12.755635
Published in SPIE Proceedings Vol. 6841:
Solid State Lighting and Solar Energy Technologies
Jinmin Li; Yuwen Zhao; Nuofu Chen; Ling Wu; Yubo Fan; Vladimir M. Andreev; Yong-Hang Zhang; Jai Singh; Michael E. Coltrin, Editor(s)
PDF: 6 pages
Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410K (4 January 2008); doi: 10.1117/12.755635
Show Author Affiliations
Jianchang Yan, Institute of Semiconductors (China)
Junxi Wang, Institute of Semiconductors (China)
Naixin Liu, Institute of Semiconductors (China)
Junxi Wang, Institute of Semiconductors (China)
Naixin Liu, Institute of Semiconductors (China)
Published in SPIE Proceedings Vol. 6841:
Solid State Lighting and Solar Energy Technologies
Jinmin Li; Yuwen Zhao; Nuofu Chen; Ling Wu; Yubo Fan; Vladimir M. Andreev; Yong-Hang Zhang; Jai Singh; Michael E. Coltrin, Editor(s)
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