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Proceedings Paper

1080nm optically pumped vertical-external-cavity surface-emitting laser
Author(s): Peng Zhang; Yanrong Song; Xinping Zhang; Zhigang Zhang
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Paper Abstract

The edge emitting PL spectrum of semiconductor gain chip used in vertical external cavity surface emitting lasers was theoretically calculated by using Lorenz linear function when considering of the intraband relaxation and the valence band coupling. A model of laser output which considered of thermal effect was used to simulate our VECSELs' output power. The theoretical results were in good agreement with the experimental results. The factors which influence the output wavelength were discussed too.

Paper Details

Date Published: 7 January 2008
PDF: 4 pages
Proc. SPIE 6824, Semiconductor Lasers and Applications III, 68240W (7 January 2008); doi: 10.1117/12.754960
Show Author Affiliations
Peng Zhang, Beijing Univ. of Technology (China)
Yanrong Song, Beijing Univ. of Technology (China)
Xinping Zhang, Beijing Univ. of Technology (China)
Zhigang Zhang, Peking Univ. (China)

Published in SPIE Proceedings Vol. 6824:
Semiconductor Lasers and Applications III
Lianghui Chen; Hiroyuki Suzuki; Paul T. Rudy; Ninghua Zhu, Editor(s)

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