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Proceedings Paper

Optical damage threshold of silicon for ultrafast infrared pulses
Author(s): Benjamin M. Cowan
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Paper Abstract

We present measurements of the optical damage threshold of crystalline silicon in air for ultrafast pulses in the near infrared. The wavelengths tested span a range from the telecommunications band at 1550 nm, extending to 2260 nm. We discuss the motivation for the measurements and give theoretical context. We then describe the experimental setup, diagnostics, and procedure. The results show a breakdown threshold of 0.2 J/cm2 at 1550 nm and 1.06 ps FWHM pulse duration, and a weak dependence on wavelength.

Paper Details

Date Published: 18 December 2007
PDF: 11 pages
Proc. SPIE 6720, Laser-Induced Damage in Optical Materials: 2007, 67201M (18 December 2007); doi: 10.1117/12.753720
Show Author Affiliations
Benjamin M. Cowan, Tech-X Corp. (United States)
Stanford Linear Accelerator Ctr. (United States)

Published in SPIE Proceedings Vol. 6720:
Laser-Induced Damage in Optical Materials: 2007
Gregory J. Exarhos; Arthur H. Guenther; Keith L. Lewis; Detlev Ristau; M. J. Soileau; Christopher J. Stolz, Editor(s)

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