
Proceedings Paper
Random dye lasing supported by elastic multiple light scatteringFormat | Member Price | Non-Member Price |
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Paper Abstract
The elastic multiple light scattering (EMLS) at which a partial confinement of photons within the limits of area, where
amplification exists, promotes development of a lasing with all tags of amplified stimulated emission (ASE). Because the
spectral narrowing of the lasing with pumping power growing runs fluently without any catastrophe tags, possible for
the case of arbitrary resonances (cavity modes, distributed feedback or Anderson localization modes), the lasing
emission conserves the initial smooth spectral power distribution in spite of the strong spectral narrowing in the mass.
Simple theoretical description of ASE stipulated EMLS in relation of band width evolution and scaled threshold
conditions that is based upon the approximate determination of mean free path in EMLS media as l≈(Nσsct -αgain)-1 and Kubelka-Munk model are completed.
Paper Details
Date Published: 31 July 2007
PDF: 9 pages
Proc. SPIE 6728, ICONO 2007: Novel Photonics Materials; Optics and Optical Diagnostics of Nanostructures, 67280T (31 July 2007); doi: 10.1117/12.752214
Published in SPIE Proceedings Vol. 6728:
ICONO 2007: Novel Photonics Materials; Optics and Optical Diagnostics of Nanostructures
Oleg Andreevich Aktsipetrov; Sergey V. Gaponenko; Nikolay I. Zheludev; Vladimir M. Shalaev, Editor(s)
PDF: 9 pages
Proc. SPIE 6728, ICONO 2007: Novel Photonics Materials; Optics and Optical Diagnostics of Nanostructures, 67280T (31 July 2007); doi: 10.1117/12.752214
Show Author Affiliations
V. P. Yashchuk, National Taras Shevchenko Univ. of Kyiv (Ukraine)
O. A. Prygodiuk, National Taras Shevchenko Univ. of Kyiv (Ukraine)
O. A. Prygodiuk, National Taras Shevchenko Univ. of Kyiv (Ukraine)
V. V. Koreniuk, National Taras Shevchenko Univ. of Kyiv (Ukraine)
Published in SPIE Proceedings Vol. 6728:
ICONO 2007: Novel Photonics Materials; Optics and Optical Diagnostics of Nanostructures
Oleg Andreevich Aktsipetrov; Sergey V. Gaponenko; Nikolay I. Zheludev; Vladimir M. Shalaev, Editor(s)
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