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Proceedings Paper

EUV mask process development using DUV inspection system
Author(s): David Kim; Venu Vellanki; William Huang; Andrew Cao; Chunlin Chen; Aditya Dayal; Paul Yu; Ki Hun Park; Yumiko Maenaka; Kazuko Jochi; Gregg Inderhees
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Paper Abstract

As the design rule continues to shrink towards 3x nm and below, lithographers are searching for new and advanced methods of mask lithography such as immersion, double patterning and extreme ultraviolet lithography (EUVL). EUV lithography is one of the leading candidates for the next generation lithography technologies after 193 nm immersion and many mask makers and equipment makers have focused on stabilizing the process. With EUV lithography just around the corner, it is crucial for advanced mask makers to develop and stabilize EUV mask processes. As a result, an inspection tool is required to monitor and provide quick feedback to each process step.

Paper Details

Date Published: 30 October 2007
PDF: 8 pages
Proc. SPIE 6730, Photomask Technology 2007, 67305M (30 October 2007); doi: 10.1117/12.747163
Show Author Affiliations
David Kim, KLA-Tencor Corp. (United States)
Venu Vellanki, KLA-Tencor Corp. (United States)
William Huang, KLA-Tencor Corp. (United States)
Andrew Cao, KLA-Tencor Corp. (United States)
Chunlin Chen, KLA-Tencor Corp. (United States)
Aditya Dayal, KLA-Tencor Corp. (United States)
Paul Yu, KLA-Tencor Corp. (United States)
Ki Hun Park, KLA-Tencor Corp. (United States)
Yumiko Maenaka, KLA-Tencor Corp. (United States)
Kazuko Jochi, KLA-Tencor Corp. (United States)
Gregg Inderhees, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)

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