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Proceedings Paper

Reduction of layout complexity for shorter mask write-time
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Paper Abstract

As tolerance requirements for the lithography process continue to shrink, the complexity of the optical proximity correction is growing. Smaller correction grids, smaller fragment lengths and the introduction of pixel-based simulation lead to highly fragmented data fueling the trend of larger file sizes as well as increasing the writing times of the vector shaped beam systems commonly used for making advanced photomasks. This paper will introduce an approach of layout modifications to simplify the data considering both fracturing and mask writing constraints in order to make it more suitable for these processes. The trade-offs between these simplifications and OPC accuracy will be investigated. A data processing methodology that allows preserving the OPC accuracy and modifications all the way to the mask manufacturing will also be described. This study focuses on 65nm and 45nm designs.

Paper Details

Date Published: 16 November 2007
PDF: 12 pages
Proc. SPIE 6730, Photomask Technology 2007, 67303K (16 November 2007); doi: 10.1117/12.746986
Show Author Affiliations
Sean Hannon, Advanced Micro Devices, Inc. (United States)
Travis Lewis, Advanced Micro Devices, Inc. (United States)
Scott Goad, Advanced Micro Devices, Inc. (United States)
Kenneth Jantzen, Mentor Graphics Corp. (United States)
Jianlin Wang, Mentor Graphics Corp. (United States)
Hien T. Vu, Mentor Graphics Corp. (United States)
Emile Sahouria, Mentor Graphics Corp. (United States)
Steffen Schulze, Mentor Graphics Corp. (United States)

Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)

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