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Proceedings Paper

The study for close correlation of mask and wafer to optimize wafer field CD uniformity
Author(s): Munsik Kim; Jaesung Kang; Shinchul Kang; Goomin Jeong; Yongkyoo Choi; Oscar Han
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Paper Abstract

As device pattern size is shrinking to below 65nm on wafer, the small amount of CD variation on wafer field determine the wafer yield. Most of the wafer field CD variations come from mask CD variations across mask field. By correction of dose and transmittance on mask using wafer field CD variation, wafer CD uniformity can be extremely enhanced. To get fine correction of wafer field CD uniformity, we have developed various methods to get close correlation of mask and wafer field CD uniformity by SEM, scatterometry and area CD methods. Especially, area CD from CD-SEM and optical CD measurement tools are developed to represent each area of masks. By optimizing measurement methods, repeatability and correlation of CD uniformity between masks and wafers are enhanced to get more than 0.7 of correlation between mask and wafer. And these give us the correction method to compensate field CD variation of maskCD on wafer. More than mask CD uniformity requirement on 65nm tech of DRAM memory device has been achieved.

Paper Details

Date Published: 1 November 2007
PDF: 8 pages
Proc. SPIE 6730, Photomask Technology 2007, 67304V (1 November 2007); doi: 10.1117/12.746846
Show Author Affiliations
Munsik Kim, Hynix Semiconductor (South Korea)
Jaesung Kang, Hynix Semiconductor (South Korea)
Shinchul Kang, Hynix Semiconductor (South Korea)
Goomin Jeong, Hynix Semiconductor (South Korea)
Yongkyoo Choi, Hynix Semiconductor (South Korea)
Oscar Han, Hynix Semiconductor (South Korea)

Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)

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