Share Email Print

Proceedings Paper

The cleaning effects of mask aerial image after FIB repair in sub-80nm node
Author(s): Hyemi Lee; Goomin Jeong; Sookyeong Jeong; Sangchul Kim; Oscar Han
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The Aerial Image Measurement Tool (AIMS) can estimate the wafer printability without exposure to wafer by using scanner. Since measured aerial images are similar with wafer prints, using AIMS becomes normal for verifying issue points of a mask. Also because mask design rule continues to shrink, defects and CD uniformity are at issues as factors decreasing mask yield. Occurred defects on a mask are removed by existing mask repair techniques such as nanomachining, electron beam and focused ion beam. But damages and contaminants by chemical and physical action are found on the mask surface and contaminants above special size lead to defects on a wafer. So cleaning has been necessary after repair process and detergency has been important. Before AIMS measurement, cleaning is done to make same condition with shipped mask, which method brings repeated process - repair and cleaning - if aerial image was not usual. So cleaning effect after the FIB repair is tested by using the AIMS to find the optimized process minimizing the repeated process and to get similar scanner results. First, programmed defect mask that includes various defect size and type is manufactured on some kinds of patterns in DRAM device and sub-80nm tech. Next the defects on the programmed mask are repaired by FIB repair machine. And aerial images are compared after the chemical cleaning, non-chemical cleaning and without cleaning. Finally, approximate aerial images to scanner results are taken regardless of cleaning process. It means that residue originated from repair process doesn't affect aerial images and flexible process is possible between AIMS, repair and cleaning process. But as the effect of minute particles and contaminations will be increased if pattern size is much smaller, it needs to reconfirm the effect below the sub-60nm in DRAM device.

Paper Details

Date Published: 30 October 2007
PDF: 9 pages
Proc. SPIE 6730, Photomask Technology 2007, 673022 (30 October 2007); doi: 10.1117/12.746793
Show Author Affiliations
Hyemi Lee, Hynix Semiconductor Inc. (South Korea)
Goomin Jeong, Hynix Semiconductor Inc. (South Korea)
Sookyeong Jeong, Hynix Semiconductor Inc. (South Korea)
Sangchul Kim, Hynix Semiconductor Inc. (South Korea)
Oscar Han, Hynix Semiconductor Inc. (South Korea)

Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)

© SPIE. Terms of Use
Back to Top