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Proceedings Paper

Preliminary verifiability of the aerial image measurement tool over photolithography process
Author(s): Hyemi Lee; Goomin Jeong; Sangchul Kim; Oscar Han
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Paper Abstract

The AIMS (Aerial Image Measurement Tool) measures approximate aerial images to scanner results by adjusting the numerical aperture, illumination type and partial parameters. Accordingly, AIMS tool is used generally to verify the issue points during manufacturing a mask. Normally using a mask for photolithography needs twice verifications. One is the qualification in the mask shop. The other is verification over the photo process using the mask in the wafer fab. If evaluated data at AIMS can be trusted about photo process ability including energy latitude (EL), depth of focus (DOF), CD uniformity (CDU), pattern fidelity and mask defects including repair area, AIMS can function as a first filter before shipping the mask. That means the AIMS data can be used as a preliminary data in the wafer fab. So this study is focused on correlation between measured data at AIMS fab 193i and ArF scanner over the photo process such as EL, DOF, CDU, pattern fidelity and mask defects. First, various patterns are made on attenuated PSM from 80 to 65nm tech. Next correlations are calculated about EL, DOF and CDU by using same optical conditions, measurement points and etc at AIMS and Scanner. Also the aerial images from AIMS are compared with scanner results on defective side how those are matched with each other. Consequently defect printability and CDU map at AIMS were similar to the scanner. In CDU point of view, AIMS exceeds the predictive ability of the mask CD SEM. Moreover it means that wafer CDU can be corrected (improved) independently on the CDU result of the wafer fab by using CDU correctable femto laser tool which reduces transmittance of the mask. Surprisingly, it is possible. And Aerial image about mask defects including repair area is useful to predict the problem of the mask, since it is similar to wafer results. But aerial image compared with wafer image has more difference at 65nm technology node than at 80nm. If adjustment of threshold or measuring method can be done, prediction of the scanner result will have no matter. In conclusion, predictive results at AIMS over photo process can be applied as a preliminary data and it can be used to another index verifying the mask quality.

Paper Details

Date Published: 30 October 2007
PDF: 10 pages
Proc. SPIE 6730, Photomask Technology 2007, 67303A (30 October 2007); doi: 10.1117/12.746786
Show Author Affiliations
Hyemi Lee, Hynix Semiconductor Inc. (South Korea)
Goomin Jeong, Hynix Semiconductor Inc. (South Korea)
Sangchul Kim, Hynix Semiconductor Inc. (South Korea)
Oscar Han, Hynix Semiconductor Inc. (South Korea)

Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)

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