Share Email Print

Proceedings Paper

Progressive growth and hard defect disposition integrated system for 65nm and 45nm ArF immersion lithography
Author(s): Gek Soon Chua; Sia Kim Tan; Byoung Il Choi; Oi Yin Lee; Jeong Soo Kim
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

In this paper, a defect disposition integrated system for progressive growth and hard defects has been proposed and discussed for 65 nm and 45 nm immersion lithography. Pre-programmed hard defects on mask with minimum defect size of 60 nm are studied. These mask defects are scanned by STARlight inspection with pixel size P90 for mask defect capturing. Aerial Image Measurement System (AIMS) and printed photoresist features are used for modeling. Line, space and hole in both bright and dark field are used for model setup. Printability for these programmed mask defects is determined from process critical dimension (CD) variability. Experimental wafer results on the programmed defect mask are obtained using 193 nm immersion tool with effective NA of 1.2 imaging lens. The resist CDs response to the mask defect area are measured under the different exposure dose or focus. The correlation of AIMS CD, simulated CD and wafer CD for different defect types and sizes to printability is performed. Scan result of progressive growth defects are captured and verification of its printability using AIMS and Automated Mask Defect Disposition (AMDD) from KLATencor is obtained.

Paper Details

Date Published: 25 October 2007
PDF: 12 pages
Proc. SPIE 6730, Photomask Technology 2007, 673027 (25 October 2007); doi: 10.1117/12.746622
Show Author Affiliations
Gek Soon Chua, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Sia Kim Tan, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Byoung Il Choi, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Oi Yin Lee, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Jeong Soo Kim, Chartered Semiconductor Manufacturing Ltd. (Singapore)

Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?