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Proceedings Paper

Evaluation of the effect of mask-blank flatness on CDU and DOF in high-NA systems
Author(s): Christopher Lee; Chia Wen Chang; Tomas Chin; Richard Lu; Steven Fan; Derek Chen; Gordon Chan; Torey Huang
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Paper Abstract

The purpose of paper is to investigate the impact of mask blank flatness on critical dimension uniformity (CDU) and depth of focus (DOF) in the wafer printing process with a test pattern designed for 65nm node technology. In this experiment we use 3 test masks with different flatness (0.3T, 0.5T and 1T), and the same test pattern array. The mask flatness was measured with a Tropel® UltraFlatTM 200, and the focus error is extracted from the CD data of the focus and energy matrix (FEM) analysis. The goal of the study is to quantify the mask flatness influence on the high-numerical aperture (NA) lithographic process.

Paper Details

Date Published: 30 October 2007
PDF: 14 pages
Proc. SPIE 6730, Photomask Technology 2007, 67300D (30 October 2007); doi: 10.1117/12.746614
Show Author Affiliations
Christopher Lee, Corning Tropel Corp. (United States)
Chia Wen Chang, Nanya Technology Corp. (Taiwan)
Tomas Chin, Nanya Technology Corp. (Taiwan)
Richard Lu, Nanya Technology Corp. (Taiwan)
Steven Fan, Nanya Technology Corp. (Taiwan)
Derek Chen, Nanya Technology Corp. (Taiwan)
Gordon Chan, Toppan Chunghwa Electronics Co., Ltd. (Taiwan)
Torey Huang, Toppan Chunghwa Electronics Co., Ltd. (Taiwan)

Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)

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