As semiconductor features shrink in size and pitch, the pattern placement error at photomask, that is, the registration becomes more important factor to be reduced. Following ITRS roadmap, the registration for sub-45 nm node is required to be less than 5 nm but this specification still corresponds to the challengeable goal. Among several reasons to induce registration, here, we have focused on four major registration errors: e-beam positioning error, patterning effect, pellicle attachment effect, and sampling error of measurement. We quantify and analyze each error with the help of finite element modeling and by experiment. Based on these results, we present the current status and the goal of each error for the roadmap of sub-45 nm node.

Date Published: 30 October 2007
PDF: 10 pages
Proc. SPIE 6730, Photomask Technology 2007, 67301O (30 October 2007);

Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)