As the design rule of lithography becomes smaller, accuracy and precision in Critical Dimension (CD) and controllability of pattern-shape are required in semiconductor production. Critical Dimension Scanning Electron Microscope (CD SEM) is an essential tool to confirm the quality of the mask such as CD control, CD uniformity and CD mean to target (MTT). Unfortunately, in the case of extremely rounded region of arbitrary enclosed patterns, CD fluctuation depending on Region of Interest (ROI) is very serious problem in Mask CD control, so that it decreases the yield. In order to overcome this situation, we have been developing 2-dimensonal (2D) method with system makers and comparing CD performance between mask and wafer using enclosed arbitrary patterns. In this paper, we summarized the results of our evaluation that compare error budget between 1-dimensonal (1D) and 2D data using CD SEM and other optical metrology systems.

Date Published: 30 October 2007
PDF: 8 pages
Proc. SPIE 6730, Photomask Technology 2007, 673037 (30 October 2007); doi: 10.1117/12.746453

Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)