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Proceedings Paper

1.55 μm extremely efficient and polarization insensitive tunable Mach-Zehnder wavelength duplexer based on an InGaAsP/InP ridge waveguide structure
Author(s): L. Xu; X. J. M. Leijtens; M. J. H. Sander-Jochem; T. de Vries; Y. S. Oei; P. J. van Veldhoven; R. Nötzel; Meint K. Smit
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Paper Abstract

A tunable Mach-Zehnder wavelength duplexer has been realized based on P-i-n-N InGaAsP/InP. It has been made polarization insensitive by proper wafer layer stack and proper waveguide geometry. The layer stack for the duplexer was tested first with a waveguide phase shifter, which resulted in up to 36°/(V•mm) phase shifting efficiency for TE polarization, which is slightly more efficient than the most efficient phase shifter reported to date in bulk InP at 1.55 μm, and with much lower transmission loss[1]. The transmission loss was measured to be 4 dB/cm (5 dB/cm) for TE (TM) polarized light, for 2 μm wide shallowly etched waveguides, which is rather low compared to other reported high efficiency phase shifters for this material system. With this layerstack, we designed a Mach-Zehnder (MZ) duplexer with narrow, 1.5 μm wide, deeply etched phase shifters that meet the polarization insensitivity requirement. The measurement results showed that the phase shifting efficiency of this narrow and deeply etched duplexer is up to 34°/(V•mm) for both TE and TM polarization, and the transmission loss of this 1.5 μm wide waveguide is about 10 dB/cm for both TE and TM polarization. This is also the first reported deeply etched narrow phase shifter with high phase shifting efficiency and relatively low loss.

Paper Details

Date Published: 12 December 2007
PDF: 7 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67820B (12 December 2007); doi: 10.1117/12.745460
Show Author Affiliations
L. Xu, Technische Univ. Eindhoven (Netherlands)
X. J. M. Leijtens, Technische Univ. Eindhoven (Netherlands)
M. J. H. Sander-Jochem, Technische Univ. Eindhoven (Netherlands)
T. de Vries, Technische Univ. Eindhoven (Netherlands)
Y. S. Oei, Technische Univ. Eindhoven (Netherlands)
P. J. van Veldhoven, Technische Univ. Eindhoven (Netherlands)
R. Nötzel, Technische Univ. Eindhoven (Netherlands)
Meint K. Smit, Technische Univ. Eindhoven (Netherlands)

Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)

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