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Proceedings Paper

Calculation of photosensitivity of porous silicon for optoelectronic devices
Author(s): Liubomyr S. Monastyrskii; Bogdan S. Sokolovskii
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Paper Abstract

It has been developed a new theoretical model for the photosensitivity of porous silicon which takes into account the recombination of photocarriers at the surfaces of spherical pores. An expression for the semiconductor photoconductivity has been derived under assumption of uniform generation of photocarriers and diffusion character of their movement. The photosensitivity of porous silicon has been shown to strongly depend on the velocity of photocarriers recombination at the pore's surfaces, radius of pores and average distance between pores.

Paper Details

Date Published: 26 April 2007
PDF: 5 pages
Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 66360T (26 April 2007); doi: 10.1117/12.742527
Show Author Affiliations
Liubomyr S. Monastyrskii, Ivan Franko National Univ. of Lviv (Ukraine)
Bogdan S. Sokolovskii, Ivan Franko National Univ. of Lviv (Ukraine)

Published in SPIE Proceedings Vol. 6636:
19th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Vladimir P. Ponomarenko; Alexander I. Dirochka, Editor(s)

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