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Proceedings Paper

Wet-etching characteristics of GeSbTe phase-change films for high density media
Author(s): Jin-Hong Kim; Jungshik Lim; Jun-Seok Lee
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Paper Abstract

Phase-change wet-etching technology using GeSbTe phase-change films are developed. Selective etching between an amorphous and a crystalline phase can be carried out with an alkaline etchant of NaOH. The degree of etching was investigated by optical images using an optical microscope and the transmittance between the crystalline and amorphous films coated on transparent substrate during an etching process. Etching selectivity is dependent not only on the concentration of the alkaline etchant but also on a film structure. Specifically, metal films for a heat control cause marked effects on the etching properties of GeSbTe film. Surviving amorphous pits can be obtained with Al metal layer, however etched amorphous pits are seen with Ag metal layer. An opposite selective etching behavior can be observed between samples with two different metal layers.

Paper Details

Date Published: 11 July 2007
PDF: 6 pages
Proc. SPIE 6620, Optical Data Storage 2007, 66202D (11 July 2007); doi: 10.1117/12.738916
Show Author Affiliations
Jin-Hong Kim, LG Elite (South Korea)
Jungshik Lim, LG Elite (South Korea)
Jun-Seok Lee, LG Elite (South Korea)

Published in SPIE Proceedings Vol. 6620:
Optical Data Storage 2007
Bernard Bell; Takeshi Shimano, Editor(s)

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