Proceedings Paper
Quantum dot resonant tunneling diodes for telecom wavelength single-photon detection| Format | Member Price | Non-Member Price |
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Paper Abstract
Single photon detection was realized at a telecom wavelength with quantum dot resonant tunneling diodes grown on an
InP substrate. The structure contains a AlAs/In0.53Ga0.47As/AlAs quantum well with InAs quantum dots grown on the top
AlAs barrier. The single photon detection efficiency of the device under 1310 nm illumination was measured to be about
0.35%±0.07% with a dark count rate of 1.58×10-6 ns-1. This corresponds to an internal efficiency of 6.3%.
Paper Details
Date Published: 25 September 2007
PDF: 6 pages
Proc. SPIE 6766, Optoelectronic Devices: Physics, Fabrication, and Application IV, 67660N (25 September 2007); doi: 10.1117/12.737307
Published in SPIE Proceedings Vol. 6766:
Optoelectronic Devices: Physics, Fabrication, and Application IV
Joachim Piprek; Jian J. Wang, Editor(s)
PDF: 6 pages
Proc. SPIE 6766, Optoelectronic Devices: Physics, Fabrication, and Application IV, 67660N (25 September 2007); doi: 10.1117/12.737307
Show Author Affiliations
H. W. Li, Toshiba Research Europe Ltd. (United Kingdom)
P. Simmonds, Univ. of Cambridge (United Kingdom)
H. E. Beere, Univ. of Cambridge (United Kingdom)
P. Simmonds, Univ. of Cambridge (United Kingdom)
H. E. Beere, Univ. of Cambridge (United Kingdom)
B. E. Kardynał, Toshiba Research Europe Ltd. (United Kingdom)
D. A. Ritchie, Univ. of Cambridge (United Kingdom)
A. J. Shields, Toshiba Research Europe Ltd. (United Kingdom)
D. A. Ritchie, Univ. of Cambridge (United Kingdom)
A. J. Shields, Toshiba Research Europe Ltd. (United Kingdom)
Published in SPIE Proceedings Vol. 6766:
Optoelectronic Devices: Physics, Fabrication, and Application IV
Joachim Piprek; Jian J. Wang, Editor(s)
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