
Proceedings Paper
Mesophase semiconductors and the field effect transistorsFormat | Member Price | Non-Member Price |
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Paper Abstract
Here we show the simple fabrication of field effect transistor (FET) with a mesophase semiconductor, a derivative of
dithienyl naphthalene, which exhibits a fast mobility (10-1 ~ 10-2 cm2 V-1 s-1) of charged carriers in the mesophase. The
compound is a mesogen, but with highly ordered layered structure in a triclinic lattice, meaning a 3D-mesophase is
formed. The device performance was studied for the transistor mobility, on/off ratio and threshold voltage of device
operation, to have 0.14 cm2 V-1 s-1, 2 x 103 and -27 V at room temperature (in a crystal phase), respectively, even though
the thin film active layer (100 nm thick) does have a multi-domain system. However, the XRD studies indicate the
uniformly aligned molecules in each domain, of which long axis is inclined to be ca. 27° against the axis perpendicular
to the substrate plane. This implies that a self-assembling nature of mesogenic molecules is a certain merit for thin film
device fabrication in organic electronics.
Paper Details
Date Published: 12 September 2007
PDF: 8 pages
Proc. SPIE 6654, Liquid Crystals XI, 66540I (12 September 2007); doi: 10.1117/12.734910
Published in SPIE Proceedings Vol. 6654:
Liquid Crystals XI
Iam Choon Khoo, Editor(s)
PDF: 8 pages
Proc. SPIE 6654, Liquid Crystals XI, 66540I (12 September 2007); doi: 10.1117/12.734910
Show Author Affiliations
Y. Shimizu, National Institute of Advanced Industrial Science and Technology, Kansai (Japan)
K. Oikawa, KANTO Chemical Co., Inc. (Japan)
K. Nakayama, Yamagata Univ. (Japan)
H. Monobe, National Institute of Advanced Industrial Science and Technology, Kansai (Japan)
T. Kimoto, KANTO Chemical Co., Inc. (Japan)
K. Oikawa, KANTO Chemical Co., Inc. (Japan)
K. Nakayama, Yamagata Univ. (Japan)
H. Monobe, National Institute of Advanced Industrial Science and Technology, Kansai (Japan)
T. Kimoto, KANTO Chemical Co., Inc. (Japan)
K. Tsuchiya, KANTO Chemical Co., Inc. (Japan)
B. Heinrich, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR CNRS-ULP (France)
D. Guillon, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR CNRS-ULP (France)
M. Yokoyama, Osaka Univ. (Japan)
B. Heinrich, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR CNRS-ULP (France)
D. Guillon, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR CNRS-ULP (France)
M. Yokoyama, Osaka Univ. (Japan)
Published in SPIE Proceedings Vol. 6654:
Liquid Crystals XI
Iam Choon Khoo, Editor(s)
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