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Proceedings Paper

Photocurrent enhancement in In0.53Ga0.47As solar cells grown on InP/SiO2/Si transferred epitaxial templates
Author(s): James M. Zahler; Katsuaki Tanabe; Corinne Ladous; Tom Pinnington; Frederick D. Newman; Harry A. Atwater
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Paper Abstract

InP/Si engineered substrates formed by wafer bonding and layer transfer have the potential to significantly reduce the cost and weight of III-V compound semiconductor solar cells. InP/Si substrates were prepared by He implantation of InP prior to bonding to a thermally oxidized Si substrate and annealing to exfoliate an InP thin film. Following thinning of the transferred InP film to remove surface damage caused by the implantation and exfoliation process, InGaAs solar cells lattice-matched to bulk InP were grown on these substrates using metal-organic chemical vapor deposition. The photovoltaic current-voltage characteristics of the InGaAs cells fabricated on the wafer-bonded InP/Si substrates were comparable to those synthesized on commercially available epi-ready InP substrates, and had a ~20% higher short-circuit current which we attribute to the high reflectivity of the InP/SiO2/Si bonding interface. This work provides an initial demonstration of wafer-bonded InP/Si substrates as an alternative to bulk InP substrates for solar cell applications.

Paper Details

Date Published: 11 September 2007
PDF: 8 pages
Proc. SPIE 6649, High and Low Concentration for Solar Electric Applications II, 664909 (11 September 2007); doi: 10.1117/12.734801
Show Author Affiliations
James M. Zahler, Aonex Technologies (United States)
Katsuaki Tanabe, California Institute of Technology (United States)
Corinne Ladous, Aonex Technologies (United States)
Tom Pinnington, Aonex Technologies (United States)
Frederick D. Newman, Emcore Photovoltaics (United States)
Harry A. Atwater, California Institute of Technology (United States)

Published in SPIE Proceedings Vol. 6649:
High and Low Concentration for Solar Electric Applications II
Martha Symko-Davies, Editor(s)

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