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Proceedings Paper

High mobility solution-processed n-channel organic thin film transistors
Author(s): He Yan; Shaofeng Lu; Yan Zheng; Philippe Inagaki; Antonio Facchetti; Tobin J. Marks
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Paper Abstract

N-channel organic thin-film transistors (OTFTs) based on N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10- bis(dicarboximide) (PDI8-CN2) were fabricated using different semiconductor film deposition methods, dielectric materials, and device structures. It was found that top -contact OTFTs fabricated on Si-SiO2 substrates with drop-cast or vapor deposited films afford comparable electron mobilities (0.01-0.1 cm2/Vs), much larger than those based on spin-coated PDI8-CN2 films (0.001 cm2/Vs). Furthermore, n-channel top-contact TFTs were fabricated using solution-processed PDI8-CN2 films and a UV-curable solution-processed polymeric dielectric. These devices exhibit typical gate leakage currents < 1nA for Vgate > 100V, which are negligible compared to the corresponding source/drain currents (> 0.1mA). OTFTs tested in ambient exhibit electron mobilities as high as 0.05-0.2 cm2/Vs and Ion:Ioff ~ 105. Furthermore, Isource-drain-Vgate hysterisis is negligible when the OTFTs were tested in both bias directions at different Vgate scan rates, demonstrating excellent insulator-semiconductor interfacial properties. Bottom-contact TFTs exhibit typical lower performance (~ ×0.1)compared to the top-contact structure. All of the devices stored in air for several months exhibit no degradation of the device characteristics.

Paper Details

Date Published: 13 September 2007
PDF: 8 pages
Proc. SPIE 6658, Organic Field-Effect Transistors VI, 66580S (13 September 2007); doi: 10.1117/12.733185
Show Author Affiliations
He Yan, Polyera Corp. (United States)
Shaofeng Lu, Northwestern Univ. (United States)
Yan Zheng, Polyera Corp. (United States)
Philippe Inagaki, Polyera Corp. (United States)
Antonio Facchetti, Northwestern Univ. (United States)
Tobin J. Marks, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 6658:
Organic Field-Effect Transistors VI
Zhenan Bao; David J. Gundlach, Editor(s)

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