
Proceedings Paper
NTSIC: progress in recent two yearsFormat | Member Price | Non-Member Price |
---|---|---|
$17.00 | $21.00 |
Paper Abstract
New-Technology Silicon Carbide (NTSIC(R)) is a reaction sintered silicon carbide with very high bending strength. Two
times higher bending strength than other SiC materials is important characteristics in an optical mirror for space
application. The space optics is to endure the launch environment such as mechanical vibration and shock as well as
lightweight and good thermal stability of their figure. NTSIC has no open pore. It provides good surface roughness for
infrared and visible application, when its surface is polished without additional coatings. Additional advantages are in the
fabrication process. The sintering temperature is significantly lower than that of a sintered silicon carbide ceramics and
its sintering shrinkage is less than one percent. These advantages will provide rapid progress to fabricate large structures.
Both reaction bonding method and brazing are studied in order to larger application for larger telescope. It is concluded
that NTSIC has potential to provide large lightweight optical mirror.
Paper Details
Date Published: 17 September 2007
PDF: 9 pages
Proc. SPIE 6666, Optical Materials and Structures Technologies III, 66660J (17 September 2007); doi: 10.1117/12.732309
Published in SPIE Proceedings Vol. 6666:
Optical Materials and Structures Technologies III
William A. Goodman; Joseph L. Robichaud, Editor(s)
PDF: 9 pages
Proc. SPIE 6666, Optical Materials and Structures Technologies III, 66660J (17 September 2007); doi: 10.1117/12.732309
Show Author Affiliations
Katsuhiko Tsuno, NEC TOSHIBA Space Systems, Ltd. (Japan)
Kazuhiko Oono, NEC TOSHIBA Space Systems, Ltd. (Japan)
Hiroshi Irikado, NEC TOSHIBA Space Systems, Ltd. (Japan)
Kazuhiko Oono, NEC TOSHIBA Space Systems, Ltd. (Japan)
Hiroshi Irikado, NEC TOSHIBA Space Systems, Ltd. (Japan)
Published in SPIE Proceedings Vol. 6666:
Optical Materials and Structures Technologies III
William A. Goodman; Joseph L. Robichaud, Editor(s)
© SPIE. Terms of Use
