
Proceedings Paper
Role of intrinsic band-gap states for the energy level alignment at weakly interacting organic-conductor interfaces: gap states versus band dispersion in pentacene thin filmsFormat | Member Price | Non-Member Price |
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Paper Abstract
We observed very small electronic density of states in the band gap of pentacene thin films deposited on inert surfaces
using ultraviolet photoelectron spectroscopy (UPS) with ultrahigh sensitivity. We found, furthermore, that a pentacene
film with less density of gap states gives a splitting of the HOMO band in UPS spectra with energy separation of about
0.45 eV due to the band dispersion even for ultrathin polycrystalline films. The results indicate that the gap states do not
originate from electronic interaction between pentacene and the substrate surface but from imperfect molecular
orientation/packing structure. We confirmed that the Fermi level pinning in the pentacene films originates from the
intrinsic gap states depending on their density and energy distribution. The Fermi level position as well as appearance of
the band dispersion in pentacene thin films therefore depends sensitively on perfectness of the molecular packing
structure in each crystal grain.
Paper Details
Date Published: 17 October 2007
PDF: 9 pages
Proc. SPIE 6656, Organic Photovoltaics VIII, 66560D (17 October 2007); doi: 10.1117/12.731956
Published in SPIE Proceedings Vol. 6656:
Organic Photovoltaics VIII
Zakya H. Kafafi; Paul A. Lane, Editor(s)
PDF: 9 pages
Proc. SPIE 6656, Organic Photovoltaics VIII, 66560D (17 October 2007); doi: 10.1117/12.731956
Show Author Affiliations
Hirohiko Fukagawa, Chiba Univ. (Japan)
Published in SPIE Proceedings Vol. 6656:
Organic Photovoltaics VIII
Zakya H. Kafafi; Paul A. Lane, Editor(s)
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