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Proceedings Paper

Optical triode with quantum dot semiconductor optical amplifiers
Author(s): Jae-Hoon Huh; Yasuhiko Kuroki; Sayaka Maki; Yoshinobu Maeda
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Paper Abstract

Semiconductor optical amplifiers (SOAs) having nano-sized quantum dot (QD) particles show attractive features such as the achievement of a steady temperature characteristic, low power consumption, and a high-speed response to the input signal. QD active layers were designed to 15 stacks of InAs QDs, AlGaAs/GaAs double hetero structure. QD-SOAs were fabricated for optical triode that can be used with a 1.3 μm band. Modulation results extracted by input, control and output waveforms support the fact that cross-gain modulation and negative feedback amplification effect can be strongly contributed to obtain essential factors for future application such as dramatical baseline suppression of output signal and satisfying high modulation. Optical triode revealed inverted type characteristics that high output power can readily obtained by be increased quite small amount of input power while output power rarely change though input power increase high. Fulfillment of far more upgraded stable high-speed bit rate was completed by optical triode improved by QD-SOA and it's containing cross-gain modulation effect. 40 Gbps performance optical triode will be the accelerator for realization of the functions of regeneration, reshaping, multiple-wavelength processing, wavelength conversion, and demultiplexing of high-bit rate patterned optical signals.

Paper Details

Date Published: 25 September 2007
PDF: 8 pages
Proc. SPIE 6766, Optoelectronic Devices: Physics, Fabrication, and Application IV, 67660I (25 September 2007); doi: 10.1117/12.731385
Show Author Affiliations
Jae-Hoon Huh, Toyota Technological Institute (Japan)
Yasuhiko Kuroki, Toyota Technological Institute (Japan)
Sayaka Maki, Toyota Technological Institute (Japan)
Yoshinobu Maeda, Toyota Technological Institute (Japan)

Published in SPIE Proceedings Vol. 6766:
Optoelectronic Devices: Physics, Fabrication, and Application IV
Joachim Piprek; Jian J. Wang, Editor(s)

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