Share Email Print

Proceedings Paper

Recent progress on GaN-based vertical cavity surface emitting lasers
Author(s): T. C. Lu; C. C. Kao; G. S. Huang; H. C. Kuo; S. C. Wang
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

We report the recent progress of GaN-based VCSELs with two different laser structures. One is a hybrid cavity structure comprised an epitaxial AlN/GaN DBR, an InGaN/GaN MQW active region and a top dielectric DBR. Another is a dielectric cavity structure comprised an InGaN/GaN MQW layer sandwiched by two dielectric DBRs. Both lasers achieved laser action under optical pumping at the room temperature with narrow linewidth. The detailed characteristics of VCSELs will be reported. The status of the electrically pumped VCSEL will also be presented.

Paper Details

Date Published: 25 September 2007
PDF: 12 pages
Proc. SPIE 6766, Optoelectronic Devices: Physics, Fabrication, and Application IV, 67660G (25 September 2007); doi: 10.1117/12.729281
Show Author Affiliations
T. C. Lu, National Chiao Tung Univ. (Taiwan)
C. C. Kao, National Chiao Tung Univ. (Taiwan)
G. S. Huang, National Chiao Tung Univ. (Taiwan)
H. C. Kuo, National Chiao Tung Univ. (Taiwan)
S. C. Wang, National Chiao Tung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 6766:
Optoelectronic Devices: Physics, Fabrication, and Application IV
Joachim Piprek; Jian J. Wang, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?