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Proceedings Paper

A novel etch method for TaBO/TaBN EUVL mask
Author(s): Banqiu Wu; Ajay Kumar
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Paper Abstract

Etching of TaBO/TaBN absorbers on EUVL masks was studied. The self-mask strategy and etch selectivity optimization were used for obtaining the best etch CD performance. Gibbs Energy Minimization was used for determining etch gas selection and product volatility. Calculated results suggest the use of a two-step etch process, i.e. using fluorinecontaining gas to etch the antireflective (AR) layer and using chlorine-containing gas to etch the bulk absorber beneath AR. High selectivity of TaBN-to-TaBO was obtained and the AR hard mask function was proven. By using this method, one EUVL mask can be used many times by selectively exposing portions of a mask during etch. A profilometer was used for etch product characterization and etch CD results were verified by using CD SEM measurement. Optimal conditions developed on the Applied Materials Tetra Mask Etch System by using just one mask gave etch CD bias of 3 nm, etch CD uniformity of <3 nm, excellent sidewall profile, and high selectivity of absorber layer to resist and absorber to buffer layer. Etch effects on the backside chrome coating were also examined. No arcing on the backside during EUVL absorber and buffer etching was identified.

Paper Details

Date Published: 15 May 2007
PDF: 8 pages
Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66073E (15 May 2007); doi: 10.1117/12.729033
Show Author Affiliations
Banqiu Wu, Applied Materials, Inc. (United States)
Ajay Kumar, Applied Materials, Inc. (United States)

Published in SPIE Proceedings Vol. 6607:
Photomask and Next-Generation Lithography Mask Technology XIV
Hidehiro Watanabe, Editor(s)

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