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Proceedings Paper

A comparison study of tantalum-nitrogen and chromium absorber in extreme ultraviolet mask fabrication using electron-beam lithography simulation
Author(s): Guorong Zhao; Yanqiu Li
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Paper Abstract

EUVL will be a most likely candidate for the next generation lithography beyond 32nm node. The proper material of Extreme Ultraviolet (EUV) mask absorber is crucial. Many researches indicated that tantalum-nitrogen (TaN) and chromium (Cr) are the better candidates. However, these studies mainly focus on the optical performance. Researchers pay little attention to the influence of absorber material on mask fabrication by Electron Beam Lithography (EBL). In this paper, using an EBL module of in house software MicroCruiser, the study of comparison of the influence of TaN and Cr absorber on EUV mask fabrication is presented from the perspective of the backscattering coefficient, the energy deposition of BE in resist, the line edge roughness of patter profile, and the side wall angle of the pattern profile, respectively. An EBL module of MicroCruiser is developed including complex inelastic scattering and relativistic correction of high energy electron which were not considered in previous simulation software of EBL.

Paper Details

Date Published: 15 May 2007
PDF: 8 pages
Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66073C (15 May 2007); doi: 10.1117/12.729031
Show Author Affiliations
Guorong Zhao, Graduate Univ. of the Chinese Academy of Sciences (China)
Institute of Electrical Engineering, Chinese Academy of Sciences (China)
Yanqiu Li, Graduate Univ. of the Chinese Academy of Sciences (China)

Published in SPIE Proceedings Vol. 6607:
Photomask and Next-Generation Lithography Mask Technology XIV
Hidehiro Watanabe, Editor(s)

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