
Proceedings Paper
EUV mask blank defect inspection strategies for 32-nm half-pitch and beyondFormat | Member Price | Non-Member Price |
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Paper Abstract
The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography
(EUVL) into manufacturing. Evidently, the success of the industry's mask blank defect reduction effort will critically
depend on the timely availability of defect inspection tools that can find ever smaller defects. The first generation of
defect inspection tools enabled SEMATECH's Mask Blank Development Center (MBDC) to reduce mask blank defects
to a level sufficient for use in EUV alpha tools. The second tool generation is currently enabling the MBDC to meet
EUV pilot line requirements by the end of 2007. However, to meet high volume manufacturing (HVM) mask blank
defect requirements for 32 nm half-pitch (hp) patterning, the industry needs a third generation of defect inspection tools.
This next EUV inspection tool generation must be able to find defects of ≤ 20 nm on mask blanks with a high capture
rate and high blank throughput. In addition, these tools will also need to support extendibility assessments of low defect
deposition technologies and the associated infrastructure towards meeting 22 nm half-pitch defect specifications. While
visible light inspection is likely to support defect inspection needs for mask substrates over several technology nodes,
the industry must explore other options for mask blanks and patterned masks. Evaluating the use of inexpensive printing
tools and wafer-based inspection to search for repeating defects must be part of an overall strategy to address mask
blank and patterned mask defect inspection.
Paper Details
Date Published: 15 May 2007
PDF: 9 pages
Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66073A (15 May 2007); doi: 10.1117/12.729029
Published in SPIE Proceedings Vol. 6607:
Photomask and Next-Generation Lithography Mask Technology XIV
Hidehiro Watanabe, Editor(s)
PDF: 9 pages
Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66073A (15 May 2007); doi: 10.1117/12.729029
Show Author Affiliations
Stefan Wurm, SEMATECH, Inc. (United States)
Hakseung Han M.D., SEMATECH, Inc. (United States)
Patrick Kearney, SEMATECH, Inc. (United States)
Hakseung Han M.D., SEMATECH, Inc. (United States)
Patrick Kearney, SEMATECH, Inc. (United States)
Wonil Cho, SEMATECH, Inc. (United States)
Chan-Uk Jeon, SEMATECH, Inc. (United States)
Eric Gullikson, Lawrence Berkeley National Lab. (United States)
Chan-Uk Jeon, SEMATECH, Inc. (United States)
Eric Gullikson, Lawrence Berkeley National Lab. (United States)
Published in SPIE Proceedings Vol. 6607:
Photomask and Next-Generation Lithography Mask Technology XIV
Hidehiro Watanabe, Editor(s)
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