As the minimum feature size gets smaller, the use of optical proximity correction (OPC) becomes more aggressive. The time for mask data preparation dramatically increases. The increase in the number of small size patterns in design causes the increase of Mask Rule Check (MRC) error. It brings the need for checking the error between mask fab and Taped-out customers. Therefore, the Turn-Around Time (TAT) is enlarged. MRC offers not only the rule check but also the violated-pattern-correction to satisfy the quality requested by the customers. In this paper, we suggest a new MRC flow by using new MRC tool that carrys out MRC over various input of e-beam data and handles the MRC output data. In case of the violated pattern which approaches Mask Constraint we expand violated pattern size for pattern correction. And the elimination method can be applied to very small pattern. We describe how well preformed differently in mask exposure time and inspection capability.

Date Published: 21 May 2007
PDF: 11 pages
Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66070V (21 May 2007); doi: 10.1117/12.728945

Published in SPIE Proceedings Vol. 6607:
Photomask and Next-Generation Lithography Mask Technology XIV
Hidehiro Watanabe, Editor(s)