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Proceedings Paper

1-nm of local CD accuracy for 45-nm-node photomask with low sensitivity CAR for e-beam writer
Author(s): Kunihiro Ugajin; Masato Saito; Machiko Suenaga; Tomotaka Higaki; Hideaki Nishino; Hidehiro Watanabe; Osamu Ikenaga
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Paper Abstract

We achieved highly accurate Local CD in the vicinity of 1nm with the newly developed low sensitivity chemically amplified resist (CAR) for the e-beam reticle writer, EBM-6000. We applied shot noise model to estimate Line Edge Roughness (LER). According to the estimation result, LER is improved by increasing the threshold dosage. We evaluated the performance of newly developed low sensitivity CAR. Local CD accuracy, LER, pattern resolution and drawing time are evaluated. We concluded that the performance with the low sensitivity CAR was good enough to produce photomasks for 45nm half pitch (HP) devices.

Paper Details

Date Published: 11 May 2007
PDF: 8 pages
Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66070A (11 May 2007); doi: 10.1117/12.728923
Show Author Affiliations
Kunihiro Ugajin, Toshiba Corp. (Japan)
Masato Saito, Toshiba Corp. (Japan)
Machiko Suenaga, Toshiba Corp. (Japan)
Tomotaka Higaki, Toshiba Corp. (Japan)
Hideaki Nishino, Toshiba Corp. (Japan)
Hidehiro Watanabe, Toshiba Corp. (Japan)
Osamu Ikenaga, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 6607:
Photomask and Next-Generation Lithography Mask Technology XIV
Hidehiro Watanabe, Editor(s)

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