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Proceedings Paper

Formation of low energy tails in silicon delta-doped GaAs/AlAs multiple quantum wells
Author(s): Aurimas Čerškus; Jurgis Kundrotas; Gintaras Valušis; Paul Harrison; Suraj Khanna; Edmund Linfield
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Paper Abstract

In this article we present results of an investigation the PL properties of highly Si &dgr;-doped GaAs/AlAs multiple QWs at liquid nitrogen and room temperatures. We discuss possible mechanisms for carrier recombination in the QW structures placing particular emphasis on the origin of the low energy tail in the PL spectra, and its features.

Paper Details

Date Published: 25 January 2007
PDF: 6 pages
Proc. SPIE 6596, Advanced Optical Materials, Technologies, and Devices, 659613 (25 January 2007); doi: 10.1117/12.726489
Show Author Affiliations
Aurimas Čerškus, Semiconductor Physics Institute (Lithuania)
Jurgis Kundrotas, Semiconductor Physics Institute (Lithuania)
Gintaras Valušis, Semiconductor Physics Institute (Lithuania)
Paul Harrison, Univ. of Leeds (United Kingdom)
Suraj Khanna, Univ. of Leeds (United Kingdom)
Edmund Linfield, Univ. of Leeds (United Kingdom)

Published in SPIE Proceedings Vol. 6596:
Advanced Optical Materials, Technologies, and Devices
Steponas Ašmontas; Jonas Gradauskas, Editor(s)

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