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Proceedings Paper

Effects of annealing on the photoluminescence of terbium-doped zinc oxide nanocrystalline
Author(s): Guo-li Song; You-Tong Yang
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Paper Abstract

Terbium-doped zinc oxide nanocrystalline are successfully prepared by Sol-Gel process at various annealing temperature from 400°C to 800°C. Photoluminescence spectrum (PL), Photoluminescence spectrum excitation(PLE) and X-ray diffraction pattern(XRD) of nanocrystalline ZnO:Tb3+ with excitation wavelength 368nm are measured at room temperature. XRD pattern indicates that nanocrystalline ZnO:Tb3+ has a hexagonal wurtzite structure and polycrystalline. The mean grain size of nanocrystalline ZnO:Tb3+ was 8nm~12nm calculated by Debye-Scherrer formula. Emission from 5D47F6 (485nm), 5D47F5 (544nm), 5D47F4 (584nm) and 5D47F3 (620nm) of Tb3+ ions, and wide visible band of ZnO were observed. Relationship between Photoluminescence intensity of the peaks of nanocrystalline ZnO:Tb3+ and annealing temperature were given, it was found that the optimal dopant concentration and annealing temperature was 4at% and 600°C. The luminescence process of Tb3+-doped zinc oxide nanocrystalline has investigated by using PL, PLE and XRD. Photoluminescence mechanism suggests that there is energy transfer between ZnO nanocrystalline hosts and the doped Tb3+ centers.

Paper Details

Date Published: 29 January 2007
PDF: 6 pages
Proc. SPIE 6279, 27th International Congress on High-Speed Photography and Photonics, 62796Z (29 January 2007); doi: 10.1117/12.725829
Show Author Affiliations
Guo-li Song, Harbin Univ. (China)
You-Tong Yang, Harbin Univ. (China)

Published in SPIE Proceedings Vol. 6279:
27th International Congress on High-Speed Photography and Photonics
Xun Hou; Wei Zhao; Baoli Yao, Editor(s)

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