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Proceedings Paper

Impact of BOX/substrate interface on low frequency noise in FD-SOI devices
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Paper Abstract

The impact of carrier trapping at the substrate/buried oxide interface on the LF noise characteristics of Fully Depleted MOSFETs has been calculated. The channel LF noise analysis based on carrier number fluctuation approach has been extended to include charge variations at the substrate/buried oxide interface. The impact of fluctuations of substrate/BOX interfacial charge on the channel drain current has thereby been studied as a function of gate bias. The results suggest that substrate doping concentration, buried oxide thickness and dielectric material have non-negligible effect on the contribution of the substrate interface noise to the total device noise. To our knowledge, the contribution of this noise to the total noise of a FD-SOI device has never been studied.

Paper Details

Date Published: 8 June 2007
PDF: 7 pages
Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66000J (8 June 2007); doi: 10.1117/12.724671
Show Author Affiliations
L. Zafari, IMEP, Minatec-INPG (France)
J. Jomaah, IMEP, Minatec-INPG (France)
G. Ghibaudo, IMEP, Minatec-INPG (France)

Published in SPIE Proceedings Vol. 6600:
Noise and Fluctuations in Circuits, Devices, and Materials
Massimo Macucci; Lode K.J. Vandamme; Carmine Ciofi; Michael B. Weissman, Editor(s)

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