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Proceedings Paper

Current and optical low-frequency noise of GaInN/GaN green light emitting diodes
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Paper Abstract

We report on the low-frequency current and light noise in 515 nm green GaInN/GaN quantum well LEDs. The current noise was the superposition of the 1/f and the generation-recombination (GR) noise. The characteristic time of the GR process was found to be proportional to the reciprocal current for the entire current range. This dependence is the characteristic for the monomolecular non-radiative recombination. The dominance of the nonradiative recombination is in agreement with the measured low external quantum efficiency (EQE) <10%. Hence, the noise measurements point out that a low EQE is caused by the low internal quantum efficiency and not by an inefficient light extraction. The noise spectra of light intensity fluctuations were close to the 1/f noise and correlated with the LED quantum efficiency and with the recombination current. Higher noise corresponded to a smaller quantum efficiency and to a higher non-radiative recombination current. The relative spectral noise densities of the light intensity fluctuations within the LED spectral line increase with the wavelength decrease. Fluctuations at different wavelengths are found to be correlated.

Paper Details

Date Published: 22 June 2007
PDF: 9 pages
Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66000I (22 June 2007); doi: 10.1117/12.724282
Show Author Affiliations
Sergey L. Rumyantsev, Rensselaer Polytechnic Institute (United States)
Ioffe Institute (Russia)
Christian Wetzel, Rensselaer Polytechnic Institute (United States)
Michael S. Shur, Rensselaer Polytechnic Institute (United States)

Published in SPIE Proceedings Vol. 6600:
Noise and Fluctuations in Circuits, Devices, and Materials
Massimo Macucci; Lode K.J. Vandamme; Carmine Ciofi; Michael B. Weissman, Editor(s)

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