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Proceedings Paper

A SiGe optical receiver with large-area photodiode
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Paper Abstract

Herein we present optical receivers with external large-area photodiode. It is intended as POF receiver for 1.25Gb/s optical fiber-line access networks. Further an overview on high-speed optical receivers with integrated and external detector in CMOS and BiCMOS, as well as in technologies of III-V compounds is provided. This work's receiver circuits are realized in 0.35μm SiGe BiCMOS technology. The first amplifier stage is a two-transistor transimpedance amplifier using a common-emitter and an emitter-follower configuration. The light-sensitive areas of the two receivers presented are 0.25mm2 (squared PIN diode) and 0.5mm2 (circular APD), with a rise time of 0.4ns and 0.7ns, respectively, at 850nm light. A high sensitivity is also required, where the receiver with external PIN diode reaches a sensitivity of -25.9dBm at the optical input using low-cost silicon-based material only.

Paper Details

Date Published: 16 May 2007
PDF: 9 pages
Proc. SPIE 6585, Optical Sensing Technology and Applications, 65851Q (16 May 2007); doi: 10.1117/12.722852
Show Author Affiliations
Artur Marchlewski, Vienna Univ. of Technology (Austria)
Wolgang Gaberl, Vienna Univ. of Technology (Austria)
Horst Zimmermann, Vienna Univ. of Technology (Austria)

Published in SPIE Proceedings Vol. 6585:
Optical Sensing Technology and Applications
Francesco Baldini; Jiri Homola; Robert A. Lieberman; Miroslav Miler, Editor(s)

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