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Proceedings Paper

Influence of the diffusion geometry on PN integrated varactors
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Paper Abstract

In this work, four different structures based on PN junction are studied. These structures are based on changing the geometry of the p+ diffusion. The designed and fabricated devices will be used like integrated varactors in radiofrequency applications. The measures have been made at frequencies since 500 MHz to 10 GHz, and the influence that diffusion geometry has in the capacitance (C), the quality factor (Q) and the tuning range (TR) have been studied. The pn varactors have been simulated with Taurus Device and have been fabricated in a 0.35um SiGe standard process. In order to obtain better benefits of the varactors, the p+ and n+ diffusion geometries have been modified. This way, novel structures called crosses, fingers, donuts, and bars have been designed and fabricated. The results of the tuning range have been obtained superior to 40%.

Paper Details

Date Published: 10 May 2007
PDF: 9 pages
Proc. SPIE 6590, VLSI Circuits and Systems III, 65901E (10 May 2007); doi: 10.1117/12.721999
Show Author Affiliations
J. García, Univ. of Las Palmas de Gran Canaria (Spain)
B. González, Univ. of Las Palmas de Gran Canaria (Spain)
M. Marrero-Martin, Univ. of Las Palmas de Gran Canaria (Spain)
I. Aldea, Univ. of Las Palmas de Gran Canaria (Spain)
J. del Pino, Univ. of Las Palmas de Gran Canaria (Spain)
A. Hernández, Univ. of Las Palmas de Gran Canaria (Spain)

Published in SPIE Proceedings Vol. 6590:
VLSI Circuits and Systems III
Valentín de Armas Sosa; Kamran Eshraghian; Félix B. Tobajas, Editor(s)

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