Rapid Temperature Processing (RTP) methodology is widely applied in thin-film photovoltaic materials technology due to high quality of fabricated cells and also perspectives for their mass manufacturing. This paper describes a RTP device structure which contains the graphite reactor for selenization of Cu/In or Cu/In/Se precursors. Strong nonlinearity of radiative energy transfer makes RTP controlling difficult so it still needs to be improved. Using mathematical model of the device, we are proposing the method of process controlling. Experimentally obtained temperature profiles of Rapid Temperature Processes are presented and compared with temperature profile of typical CIS selenization graphite reactor. Presented steering procedure, based on our model, gives improves by decreasing time needed for selenization and simultaneously reducing costs of the process.

Date Published: 20 October 2006
PDF: 5 pages
Proc. SPIE 6348, Optoelectronic and Electronic Sensors VI, 634808 (20 October 2006); doi: 10.1117/12.721040

Published in SPIE Proceedings Vol. 6348:
Optoelectronic and Electronic Sensors VI
Tadeusz Pisarkiewicz, Editor(s)