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Proceedings Paper

A study of imprint-specific defects in the step and flash imprint lithography process
Author(s): J. Perez; K. Selinidis; S. Johnson; B. Fletcher; F. Xu; J. Maltabes; I. McMackin; D. Resnick; S. V. Sreenivasan
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Paper Abstract

Researchers have demonstrated that imprint lithography techniques have remarkable replication resolution and can pattern sub-5nm structures. However, a fully capable lithography approach needs to address several challenges in order to be useful in manufacturing. For successful manufacturing insertion of Step and Flash Imprint Lithography (S-FILTM) into a broad set of applications such as photonics, magnetic storage, and integrated circuits (ICs), the following practical process related challenges need to be addressed: (i) Printing sub-50nm structures with non-uniform pattern densities: (ii) Precise alignment and overlay with the ability to mix-and-match with photolithography; (iii) Availability of 1X templates; (iv) Achieving appropriate throughput for acceptable cost of ownership; and (v) Minimizing template and imprint process-induced defects to allow acceptable process yields. The last challenge - the ability to achieve low defect densities - is desirable for all applications. However, it is one of the biggest challenges for S-FIL to be accepted in IC fabrication. This article specifically focuses on this last challenge and presents the current status of defect reduction in S-FIL technology. The article starts out by providing a brief background of S-FIL technology, and by including a discussion of the overall status of S-FIL technology in Section 1. Next, an overview of the experiments performed including the defect inspection approaches used is provided in Section 2. Section 3 introduces the classes of defects that are relevant to the S-FIL process. It also provides recent defect data for each of these classes. Section 4 presents defect data gathered over the last three years and provides defect reduction trends over this period. Section 5 discusses the topic of template lifetime. Finally Section 6 provides some concluding remarks. The defect data presented here is based on a large number of short-loop experiments based on optical inspection of templates and wafers; these data are complemented by a modest number of high resolution e-beam inspections to provide insight into S-FIL specific defects at leading edge line widths.

Paper Details

Date Published: 21 March 2007
PDF: 10 pages
Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65170L (21 March 2007); doi: 10.1117/12.720673
Show Author Affiliations
J. Perez, Molecular Imprints, Inc. (United States)
K. Selinidis, Molecular Imprints, Inc. (United States)
S. Johnson, Molecular Imprints, Inc. (United States)
B. Fletcher, Molecular Imprints, Inc. (United States)
F. Xu, Molecular Imprints, Inc. (United States)
J. Maltabes, Molecular Imprints, Inc. (United States)
I. McMackin, Molecular Imprints, Inc. (United States)
D. Resnick, Molecular Imprints, Inc. (United States)
S. V. Sreenivasan, Molecular Imprints, Inc. (United States)

Published in SPIE Proceedings Vol. 6517:
Emerging Lithographic Technologies XI
Michael J. Lercel, Editor(s)

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