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Proceedings Paper

Development of mid-wave 320x256 infrared focal plane array in Korea
Author(s): Jong-Hwa Choi; Sun Ho Kim; Chi Yeon Kim; Jae Won Kim; Nam Hwan Kim; Seung-Man Park; Soo-Ho Bae; Young-Ho Kim; Byung-Hyuk Kim; Min-Suk Jeoung; Han Jung
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Paper Abstract

This paper reports the development of mid-wave 320x256 HgCdTe IRFPA with 30μm pixel pitch since 2002 in Korea. All key technologies such as HgCdTe photodiode array fabrication process, the design of silicon readout integrated circuit and hybridization process between HgCdTe photodiode array and ROIC including underfill encapsulation process are studied and realized. The fabricated IRFPA shows good electro-optical performances such as operability over 99%, NETD of ~ 17mK and there is no degradation in the operability during 500 thermal cycles.

Paper Details

Date Published: 14 May 2007
PDF: 8 pages
Proc. SPIE 6542, Infrared Technology and Applications XXXIII, 65420H (14 May 2007); doi: 10.1117/12.719120
Show Author Affiliations
Jong-Hwa Choi, Agency for Defense Development (South Korea)
Sun Ho Kim, Agency for Defense Development (South Korea)
Chi Yeon Kim, Agency for Defense Development (South Korea)
Jae Won Kim, Agency for Defense Development (South Korea)
Nam Hwan Kim, Agency for Defense Development (South Korea)
Seung-Man Park, Agency for Defense Development (South Korea)
Soo-Ho Bae, i3system Corp. (South Korea)
Young-Ho Kim, i3system Corp. (South Korea)
Byung-Hyuk Kim, i3system Corp. (South Korea)
Min-Suk Jeoung, i3system Corp. (South Korea)
Han Jung, i3system Corp. (South Korea)

Published in SPIE Proceedings Vol. 6542:
Infrared Technology and Applications XXXIII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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